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www.irf.com 1 high reliability radiation hardened quad output dc-dc converter MAH1000503R30812Q description features 100v input, quad output total dose > 100 krad(si) see > 82 mev . cm 2 /mg low weight < 90 grams 70v to 103v dc input range o/p 1: +5.0v (up to 700ma) o/p 2: +3.3v (up to 450ma) o/p 3: -8.0v (up to 180ma) o/p 4: +12v (up to 60ma) output ripple: < 1mvrms (100hz - 50mhz) cs rejection input to outputs: > 90db (50hz - 1.0mhz) 10m ? @ 100vdc isolation input under-voltage protection meets conducted emission limits: 30hz - 60khz: 65dbuarms 60khz - 3.4mhz: -20db/decade 3.4mhz - 100mhz: 30dbuarms short circuit and overload protection meets derating requirements of eee-inst 002 and ecss-q-st-30-11 output status telemetry (bi-level) temperature telemetry (thermistor) workmanship per ipc-a610 class 3 board is coated with arathane-5750 receivers, beakons, frequency up and applications low to medium power rf systems (like down converters) on-board satellites the mah-series of isolated dc-dc converters for space applications are low to medium power radiation hardened high reliability devices designed for hostile radiation environments such as those encountered by geostationary earth orbit satellites, deep space probes and communication systems. features include small size, high efficiency, low weight, and a good tolerance to total ionizing dose, single event effects, and environmental stresses such as temperature extremes, mechanical shock, and vibration. all components are fully derated to meet the requirements of eee-inst- 002 (nasa) and ecss-q-st-30-11 (esa). extensive documentation including worst case analysis, radiation susceptibility, thermal analysis, stress analysis, and reliability analysis are available. the mah-series converter has four outputs ? three positive and one negative - each is independently regulated via linear post regulators. the outputs are sequenced during turn-on and turn-off such that the negative output comes up first at turn-on and stays up at turn-off until the positive outputs have decreased. the mah-series converters incorporate a fixed frequency flyback power converter and internal emi filter that meets the requirements for most major satellite power buses. the converter includes input under voltage shut-down functionality. due to the linear post regulation of the outputs, the mah- series is well suited for use in rf-applications where low noise, high output voltage accuracy, and high cs attenuation is required. each converter is provided as a complete board assembly for installation into the host equipment chassis. the board is conformal coated (except for mating surfaces) and is mounted in the host chassis using screws. the board outline is l x w x h: (85mm x 71mm x 18mm). the weight is less than 90 grams. non-flight versions of the mah-series converters are available for system development purposes. variations in electrical specifications and screening to meet custom requirements can be accommodated. pd-97813a
2 www.irf.com MAH1000503R30812Q (100v input, quad output) circuit description an under-voltage protection circuit prohibits the converter from operating when the line voltage is too low for safe operation. in case of an under voltage event the converter will start when the input voltage returns to its nominal level (automatic re- start). design methodology the mah-series is developed using a proven conservative design methodology, which includes selecting radiation tolerant, and established reliability components and full derating to the requirements of eee-inst-002 and ecss-q-st-30- 11. the mah-series converters utilize two-stage regulation with a flyback topology with a switching frequency of 80khz for primary regulation and linear post regulation for each of the outputs. the output power is limited under any load fault condition to approximately 120% of rated output (12v 60ma more like 145%). an overload condition on positive outputs 2 and 4 causes the converter output to behave like a constant current source with the output voltage dropping below nominal. an overload condition at the negative output causes the positive outputs to shut-down in order to protect rf- transistors in the load. an overload on the positive output 1 result in hick-up operation of the positive outputs but sequencing with the negative output is respected. the converter will resume normal operation when the load current is reduced below the current limit point. for further information please refer to the mah- series generic description available at www.irf.com .
www.irf.com 3 MAH1000503R30812Q (100v input, quad output) electrical performance characteristics for notes to specifications, refer to page 6 specifications * meets full derating input voltage range -0.5vdc to +120vdc input voltage range (note 9) +70vdc to +103vdc output power internally limited output power 0 to max. rated operating mounting point -55c to +100c operating mounting point -40c to +75c * temperature (note 10) temperature (note 9) storage temperature -55c to +125c cold start temperature -55c recommended operating conditions absolute maximum ratings conditions -40c t c +75c v in = 100v dc 5%, c l = 0 parameter condition unless otherwise specified min. nom. max. unit primary input voltage 70 100 103 v output voltage ( v out ) note 1 ( o/p 1, o/p 2, o/p 3, o/p 4 ) +5.0v 1 0% i out 100% rated load +4.975 +5.00 +5.025 +3.3v 1 +3.284 +3.30 +3.317 -8.0v 1 -7.960 -8.00 -8.040 +12v 1 +11.940 +12.00 +12.060 +5.0v 2 0% i out 100% rated load +4.925 +5.075 +3.3v 2 +3.267 +3.333 -8.0v 2 -7.880 -8.200 +12v 2 +11.820 +12.180 +5.0v 3 0% i out 100% rated load +4.900 +5.100 +3.3v 3 +3.234 +3.366 -8.0v 3 -7.840 -8.160 +12v 3 +11.760 +12.240 output power ( p out ) ( o/p 1, o/p 2, o/p 3, o/p 4 ) +5.0v 1,2,3 v in = 70v, 100v, 103v 3.50 +3.3v either output 1.49 -8.0v 1.44 +12v 0.72 output current ( i out ) ( o/p 1, o/p 2, o/p 3, o/p 4 ) +5.0v 1,2,3 v in = 70v, 100v, 103v 0 700 +3.3v either output 0 450 -8.0v 0 180 +12v 0 60 w ma limits v v v
4 www.irf.com MAH1000503R30812Q (100v input, quad output) electrical performance characteristics (continued) for notes to specifications, refer to page 6 conditions -40c t c +75c v in = 100v dc 5%, c l = 0 parameter condition unless otherwise specified min. nom. max. unit line regulation ( vr line ) 1,2,3 v in = 70v, 100v, 103v ( o/p 1, o/p 2, o/p 3, o/p 4 ) i out = 10%, 50%, 100% rated -1.0 1.0 mv load regulation ( vr load ) 1,2,3 v in = 70v, 100v, 103v ( o/p 1, o/p 2, o/p 3, o/p 4 ) i out = 10%, 50%, 100% rated -1.0 1.0 mv cross regulation ( vr cross ) 1,2,3 v in = 70v, 100v, 103v, note 1 5.0 mv input current 1,2,3 i out = 0, commanded on 10 15 ma switching frequency ( f s ) 1,2,3 notes 1, 7 72 80 88 khz input under-voltage trig level 1,2,3 0% i out 100% rated load 60 68 v output sequencing i out > 20% for output 2 turn-on delay o/p 3 to op 2 1,2,3 on is > 90% 2.0 12 turn-off delay o/p 2 to o/p 3 off is < 10% 1.0 8.0 output ripple ( v rip ) v in = 70v, 100v, 103v ( o/p 1, o/p 2, o/p 3, o/p 4 ) i out = 100% rated load +5.0v 1 frequency domain 100hz - 50mhz 1.0 +3.3v note 1 1.0 -8.0v 1.0 +12v 1.0 +5.0v 1,2 time domain 100hz - 50mhz 30 +3.3v notes 1, 2 30 -8.0v 30 +12v 30 efficiency ( e ff ) for combined output power of 1.43w 1,2,3 i out = 20% rated load 40 42 3.57w i out = 50% rated load 54 56 7.15w i out = 100% rated load 59 61 % limits ms mv rms mv pp
www.irf.com 5 MAH1000503R30812Q (100v input, quad output) electrical performance characteristics (continued) for notes to specifications, refer to page 6 conditions -40c t c +75c v in = 100v dc 5%, c l = 0 parameter condition unless otherwise specified min. nom. max. unit telemetry converter on 1,2,3 4.50 4.62 4.75 converter off -0.1 0.1 current limit point ( o/p 1, o/p 2, o/p 3, o/p 4 ) +5.0v 1,2,3 v out = 100mv below nominal 700 1700 +3.3v note 11 450 900 -8.0v 180 210 +12v 60 86 output response to step load changes ( v tld ) +5.0v 1,2,3 20% to/from full load, note 3 -200 200 +3.3v -150 150 -8.0v -80 80 +12v -300 300 turn-on response overshoot ( v os ) 10% load, full load +5.0v 1,2,3 note 5 200 +3.3v 150 -8.0v 80 +12v 300 turn-on delay ( t dly )2.010ms capacitive load ( c l ) +5.0v 1,2,3 i out = 100% rated load 500 +3.3v no effect on dc performance 250 -8.0v notes 1, 6 100 +12v each output 100 mv f limits v ma mv pk
6 www.irf.com MAH1000503R30812Q (100v input, quad output) electrical performance characteristics (continued) notes: specification and electrical performance characteristics tables 1. parameter is tested as part of design characterization or after design changes. thereafter, parameter shall be guaranteed to the limits specified. 2. guaranteed for a d.c. to 50mhz bandwidth. tested using a 10.7mhz bandwidth. 3. load current step transition time 10 s. 4. recovery time is measured from the initiation of the transient to where v out has returned to within 1% of its steady state value. 5. turn-on delay time from application of telecommand pulse to the point where output 3 = 90% of nominal output voltage. 6. capacitive load may be any value from 0 to the maximum limit without compromising the output sequencing performance. a capacitive load in excess of the maximum limit may influence the output sequencing performance and start-up time, converter operation and dc performance will remain intact. 7. the switching frequency and 1st and 2nd harmonic of the input ripple is tested on every unit. 8. mil-hdbk-217f2 stress-dependent method is used with 2 exceptions: for soldering a fixed failure rate at 0.035fit is used and for power mosfets the dissipated power (instead of rated power) is used for the pr parameter. 1 fit is 1 failure in 10 9 hours. 9. the converter meets full derating per eee-inst-002 and ecss-q-30-11a with the following exception: for schottky diode jans1n5819 a maximum derated junction temperature of +110c. for eee-inst-002 it is required that ceramic capacitors with a voltage stress below 10v shall be rated for minimum 100v - in the product such capacitors is rated for 50v minimum. 10. although operation temperatures between -55c to +100c and -40c to+75c is guaranteed, no parameter limits are specified. 11. the +12v output is only protected against hard short circuit up to an interface temperature of +40c electrical performance characteristics - definition of conditions condition definition comment 1 bol @ +25c interface temperature initial setting 2 bol @ -40c to +75c interface temperature initial setting and worst case temperature variation 3 eol @ -40c to +75c interface temperature worst case performance including initial setting, temperature variation, aging and radiation degradation conditions -40c t c +75c v in = 100v dc 5%, c l = 0 parameter condition unless otherwise specified min. nom. max. unit emc conducted i out = 100% rated load susceptibility (line rejection) 1 primary power sine wave injection of 90 100 db 3v p-p , 100hz to 1.0mhz, note 1 electromagnetic interference i out = 100% rated load (emi), conducted emission 1 notes 1, 7 (ce) isolation 1 input to output, any potential to 10 m ? telecommand input and any potential to telemetry output, test @ 100vdc device weight 90 g failure rate mil-hdbk-217f2, sf, 35c, note 8 100 fits limits per fig. 8 limits
www.irf.com 7 MAH1000503R30812Q (100v input, quad output) model definition and test plans model definition test plan - ebb the ebb must pass the following tests: test no. type of test location* remarks 1 electrical performance test, room temperature incl. limited emc test (ce 50khz-1mhz) ird acceptance test procedure 2 electrical performance test in temperature (q-level) ird acceptance test procedure 3 electrical performance test, room temperature incl. limited emc test (ce 50khz-1mhz) ird acceptance test procedure 4 final inspection ird general inspection procedure model description build standard ebb the ebb is an electrical representative model. the ebb is intended to be used by customers in their proto type at equipment level. ebb models are built at ir?s danish design center. the pcb will be had soldered by the engineering group (certified operator). no staking and conformal coating is foreseen. preferably same type of eee parts as intended for flight, but lower grade will be used for convenience. for resistors and capacitors different types with same basic characteristics may be used eqm the eqm is an electrical and mechanical representative model. the eqm is intended to be used by customer in their eqm at equipment level. flight standard for processes. same type of eee parts as intended for flight, but lower grade may be used for convenience. fm flight standard models. full flight standard
8 www.irf.com MAH1000503R30812Q (100v input, quad output) test plan - eqm test plan - fm note: location* - ird: ir?s danish design center, skovlunde, denmark - irsj: ir?s site in san jose, california, usa the eqm must pass the following tests: test no. type of test location* remarks 1 electrical performance test, room temperature incl. limited emc test (ce 50khz-1mhz) irsj acceptance test procedure 2 thermal cycling with electrical monitoring of input and outputs (q-level) irsj acceptance test procedure 10 cycles 3 electrical performance test in temperature (q-level) irsj acceptance test procedure 4 random vibration test in (q-level) external test house vibration test procedure 5 electrical performance test, room temperature incl. limited emc test (ce 50khz-1mhz) irsj acceptance test procedure 6 mechanical measurements irsj acceptance test procedure 7 final inspection irsj general inspection procedure the fm must pass the following tests: test no. type of test location* remarks 1 electrical performance test, room temperature incl. limited emc test (ce 50khz-1mhz) irsj acceptance test procedure 2 electrical performance test in temperature (a-levels) irsj acceptance test procedure 3 electrical performance test, room temperature incl. limited emc test (ce 50khz-1mhz) irsj acceptance test procedure 4 electrical performance test, room temperature irsj acceptance test procedure 5 mechanical measurements irsj acceptance test procedure 6 final inspection irsj general inspection procedure
www.irf.com 9 MAH1000503R30812Q (100v input, quad output) radiation performance tid the tid radiation performance is guaranteed by worst case analysis with radiation degradation data for each radiation sensitive component used in the dc-dc converter. for tid radiation verification testing (rvt) for each wafer lot for all sensitive components is part of the eee parts requirements per table below. tid rvt plan table component type rvt plan (applicable to all flight lots) jans2n2222a ldrs 0.01 to 0.1 rad/s up to 200krad per ir rvt plan jans2n2907a ldrs 0.01 to 0.1 rad/s up to 200krad per ir rvt plan jans2n5153 ldrs 0.01 to 0.1 rad/s up to 200krad per ir rvt plan jans2n5154 ldrs 0.01 to 0.1 rad/s up to 200krad per ir rvt plan jansr2n7492t2 rvt by manufacturer (hdr) irhf57214sescs rvt by manufacturer (hdr) jansr2n7616ub rvt by manufacturer (hdr) jansr2n7626ub rvt by manufacturer (hdr) lm124awr rvt by manufacturer (eldrs) is2-1009rh rvt by manufacturer (hdr) ldrs 0.01 to 0.1 rad/s up to 100krad per ir rvt plan uc1845a ldrs 0.01 to 0.1 rad/s up to 100krad per ir rvt plan see the see radiation performance is guaranteed by a combination of derating and mitigation at circuit level. for mitigation at circuit level both theoretical analysis and testing with imposed see effects are performed. the applicable see and mitigation concept is presented in table below. the maximum output perturbation is 5% of the nominal output voltage during any see. component type applicable see mitigation concept rh mosfet segr vds derating in combination with see soa curves from manufacturer data sheet op-amp set, 15us perturbation to rail mitigation at circuit level (filtering) voltage reference set, 10us perturbation to rail mitigation at circuit level (filtering) set, 15us perturbation to rail mitigation at circuit level (filtering) double pulses mitigation at circuit level (filtering, no saturation of magnetic parts) pwm missing pulses mitigation at circuit level (filtering, no saturation of magnetic parts)
10 www.irf.com MAH1000503R30812Q (100v input, quad output) eee parts technical standard for component screening and dpa rules, refer to the generic mah-series data sheet with pd-97814. random vibration fig 1 - block diagram axis frequency range (hz) level overall duration 20 - 100 + 6 db/oct 100 - 1000 1 sqr(g)/hz 1000 - 1500 - 3 db/oct 1500 - 2000 - 6 db/oct all axis (x, y, z) 39.9 grams 300 sec sine vibration axis frequency range (hz) level (grams) sweep duration 25 - 30 13 1 cycle all axis (x, y, z) 30 - 100 20 up from 100 15 25hz to 200hz 1 oct/min test method no.of shocks shock pulse peak value duration mil-std-202, 18 shocks method 213, cond f (3 in each direction) half sine 1500 grams 0.5 ms mechanical shocks first eigen frequency for the mah-series is placed at approx 1150 hz. input filter fly-back trans - former rectifier rectifier & filter linear regulator rectifier & filter sequen - cing hold up capacitor bank rectifier & filter pwm controller uvp monitor & latch current shunt linear regulator negative linear regulator primary power bus disable int.supply v1 v2 v3 pok int. supply status detection rectifier & filter linear regulator v4 enable start up resistor hold-up capac itors uvp sense output status telemetry o/p tm
www.irf.com 11 MAH1000503R30812Q (100v input, quad output) interface schematics fig 2 - power input: l3 l2 r1 c8 c6 r4 c9 c7 c1

l1 cr2 cr1 c5
c4 final component values may change. component component type package value voltage (v) c1 br40 ii radial 0.56 f 200 c4 br40 ii radial 0.56 f 200 c5 br40 ii radial not used 200 c6 cdr33bx smd 1210 27nf 100 c7 cdr33bx smd 1210 27nf 100 c8 cdr33bx smd 1210 15nf 100 c9 cdr33bx smd 1210 15nf 100 cr1 1n5806us a- mflf 2.5a 150 cr1 1n5806us a- mflf 2.5a 150 l1 r10 toroid 2 x300 h l2 high flux toroid 3200 h l3 high flux toroid 795 h r1 rwr81s rwr 28.7 ohms 500 r4 rm1206b smd 1206 100 ohms 100 grounding and isolation scheme parameter grounding & isolation performance isolation: primary to secondary: o/p status tm: >10mohm // < 50nf referenced to secondary return grounding: secondary return bound to chassis via multiple screw connections.
12 www.irf.com MAH1000503R30812Q (100v input, quad output) fig 3 - o/p status telemetry interface: fig 4 - o/p 1 (+5v) interface: final component values may change. from linear regulator +5v c508 101 j2 c507 102 +5v rtn c5 12 component component type package value voltage c507 cwr29 smd h 100 f 15v c508 cwr29 smd h 100 f 15v c512 cdr33bx smd 1210 100nf 50v 12 5 tmbl ne tmbl ne return r1003 r1001 c1002 +5.0v output 105 j2 106 tmbl ne tmbl ne return j1 component component type package value voltage c1002 cdr31bx smd 0805 82pf 100v r1001 rm1005b smd 1005 909 ohms 40v r1003 rm1005b smd 1005 11 kohms 40v
www.irf.com 13 MAH1000503R30812Q (100v input, quad output) fig 5 - o/p 2 (+3.3v) interface: fig 6 - o/p 3 (-8v) interface: fig 7 - o/p 4 (+12v) interface: from linear regulator +3.3v c608 110 j2 c607 109 +3.3v rtn c610 from linear regulator -8v rtn c707 107 j2 c706 108 -8v c708 from linear regulator +12v c304 103 j2 104 +12v rtn component component type package value voltage c607 cwr29 smd h 100 f 15v c608 cwr29 smd h 100 f 15v c610 cdr33bx smd 1210 100nf 50v component component type package value voltage c706 cwr29 smd h 33 f 25v c707 cwr29 smd h 33 f 25v c708 cdr33bx smd 1210 100nf 50v component component type package value voltage c304 cwr29 smd h 10 f 35v
14 www.irf.com MAH1000503R30812Q (100v input, quad output) emi performance fig 8 - typical conducted emission performance at power input fig 9 - typical conducted emission performance at output 1 (only limit shown - actual data to be added when available) (limit shown based on 5%pp of max steady-state input current to 60khz- 20db/dec above 60khz with min level at 30dbuarms) 0 10 20 30 40 50 60 70 1.00e+02 1.00e+03 1.00e+04 1.00e+05 1.00e+06 1.00e+07 emission [dbuarms] frequency [hz] ce o n p o w e r i n p u t emission limit
www.irf.com 15 MAH1000503R30812Q (100v input, quad output) fig 10 - typical conducted emission performance at output 2 fig 11 - typical conducted emission performance at output 3 (only limit shown - actual data to be added when available) (only limit shown - actual data to be added when available)
16 www.irf.com MAH1000503R30812Q (100v input, quad output) fig 13 - worst case eol. power conversion efficiency vs output power power conversion efficiency (all outputs at same relative level) fig 12 - typical conducted emission performance at output 4 (only limit shown - actual data to be added when available) 40% 45% 50% 55% 60% 65% 70% 012345678 pout [w] uin=103v uin=100v uin=70v
www.irf.com 17 MAH1000503R30812Q (100v input, quad output) recommended mounting stud design it is foreseen with a mounting stud design with circular mounting studs made out of aluminum with a diameter of 4.0mm and a treaded hole support mounting with m2 screws. 5pcs m2 screws are used for mounting the board. mounting torque shall be 30ncm 5.0ncm. electrical terminal design
18 www.irf.com MAH1000503R30812Q (100v input, quad output) mechanical diagram
www.irf.com 19 MAH1000503R30812Q (100v input, quad output) pin designation tables thermal design information the thermal design for the mah-series is solely based on heat conduction through the mounting interfaces/mounting screws into the host equipment chassis. the maximum power loss during normal operation is 4.6w. the temperature profile for the board based on all screw mounting points kept at isothermal level is given below. thermal plot worst case power dissipation during normal operation (data from similar unit ? to be updated when actual data is available) pin # pin # function 1 main bus return 9 main bus return 2 reserved 10 reserved 3 main bus 11 main bus 4 chasis (ground) 12 tm voltage 5 tm voltage return 13 reserved 6 reserved 14 reserved 7 reserved 15 reserved 8 reserved indent: input terminals (solder, pins, straight) input terminals assignment list pin # function 101 v1 (positive) 102 v1 return 103 v4 (positive) 104 v4 return 105 voltage telemetry 106 voltage telemetry return 107 v3 return 108 v3 (negative) 109 v2 return 110 v2 (positive) output terminals assignment list indent:output terminals (solder, pins, straight)
20 www.irf.com MAH1000503R30812Q (100v input, quad output) part numbering world headquarters: 101 n, sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 ir san jose: 2520 junction avenue, san jose, california 95134, usa tel: (408) 434-5000 ir denmark: literbuen10c, dk-2740 skovlunde, denmark, tel: +45 4457 5010 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 10/2014 application information standard documentation

users?s manual end item data package with coc, applicable configuration, mip photo and test results design justification documentation the following documentation can be made available upon request: worst case analysis parts stress analysis thermal analysis mechanical analysis fmeca reliability assessment declared components list declared materials list declared process list each conbverter is delivered with the following documentation. output 1 model nominal input voltage 100 = 100v 05 = +5v number of outputs q = quad outputs quality level ebb = elegant bread board model eqm = engineering qualification model blank = fight model mah-series output 2 03 = +3.3v output 3 08 = -8v output 4 12 = +12v mah 100 05 03r3 08 12 q /xxx

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